Fabrication method of varactor structure

ABSTRACT

A varactor structure includes a substrate. A first and second gate structure are disposed on the substrate. The first and second gate structures each include a base portion and a plurality of line portions connected thereto. The line portions of each of the first and second gate structures is alternately arranged. A meander diffusion region is formed in the substrate and surrounds the line portions. A first set of contact plugs is planned with at least two columns or rows and disposed on the base portions of the first and second gate structures. A second set of contact plugs is planned with at least two columns or rows and disposed on the meander diffusion region. A first conductive layer is disposed on a top end of the first set of contact plugs. A second conductive layer is disposed on a top end of the second set of contact plugs.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a divisional application of and claims the prioritybenefit of U.S. application Ser. No. 16/739,022, filed on Jan. 9, 2020,now pending, which claims the priority benefit of China applicationserial no. 201911240649.X, filed on Dec. 6, 2019. The entirety of eachof the above-mentioned patent applications is hereby incorporated byreference herein and made a part of this specification.

BACKGROUND OF THE INVENTION Field of the Invention

The invention relates to a semiconductor fabricating technology, and inparticular, to a varactor structure and a method for fabricating same.

Description of Related Art

A varactor is an element of a variable capacitor, and may be applied to,for example, a circuit operating in a millimeter wave (mm Wave)frequency band, or a mobile communications circuit. The varactor may befabricated by using a structure of a metal oxide semiconductor (MOS).However, quality of the varactor degrades as operations increase. In ahigh-frequency operating range, such as greater than 5 GHz, a qualityfactor (Q-factor) of the varactor usually decreases greatly.

How to maintain a relatively large quality factor of a varactor at arelatively high operating frequency is a technology still to be furtherdeveloped.

SUMMARY OF THE INVENTION

The invention provides a varactor structure and a method for fabricatingsame, which can improve quality of a varactor, thereby still maintainingrequired quality and improving performance of a circuit at a relativelyhigh operating frequency.

In an embodiment, the invention provides a varactor structure. Thevaractor structure includes a substrate. A first gate structure and asecond gate structure are disposed on the substrate. The first gatestructure and the second gate structure each include a base portion anda plurality of line portions connected to the base portion. Theplurality of line portions of each of the first gate structure and thesecond gate structure is alternately arranged. A meander diffusionregion is formed in the substrate and surrounds the plurality of lineportions. A first set of contact plugs is planned with at least twocolumns or rows, and disposed on the plurality of base portions of thefirst gate structure and the second gate structure. A second set ofcontact plugs is planned with at least two columns or rows, and disposedon the meander diffusion region. An input layer is disposed on a top endof the first set of contact plugs. An output layer is disposed on a topend of the second set of contact plugs.

In an embodiment, for the varactor structure, each of the plurality ofline portions is of a single-line structure.

In an embodiment, for the varactor structure, each of the plurality ofline portions includes a brunched structure at an end relative to thebase portion.

In an embodiment, for the varactor structure, the base portion of thefirst gate structure and the base portion of the second gate structureare disposed on two sides of the meander diffusion region.

In an embodiment, for the varactor structure, the second set of contactplugs on the meander diffusion region includes at least a first groupdistributed along a first meander line of the meander diffusion regionand a second group distributed along a second meander line of themeander diffusion region, and the first meander line is parallel to thesecond meander line.

In an embodiment, for the varactor structure, the first set of contactplugs on each of the base portions includes at least a first groupdistributed along a first extension line of each of the base portionsand a second group distributed along a second extension line of each ofthe base portions, and the first extension line is parallel to thesecond extension line.

In an embodiment, the varactor structure further includes a guard ringon the substrate and surrounding the first gate structure, the secondgate structure, and the meander diffusion region.

In an embodiment, the varactor structure further includes a doped wellregion on the substrate and below the meander diffusion region, thefirst gate structure, and the second gate structure.

In an embodiment, the invention also provides a varactor structure. Thevaractor structure includes a substrate. A first closed gate structureand a second closed gate structure are disposed on the substrate. Thefirst closed gate structure and the second closed gate structure eachinclude a base portion and a plurality of close loops respectivelyconnected to the base portion. The first closed gate structure and thesecond closed gate structure are alternately arranged. A diffusionregion is formed in the substrate and surrounds the plurality of closeloops. A first set of contact plugs is planned with at least two columnsor rows, and disposed on each of the base portions. A second set ofcontact plugs is planned with at least two columns or rows, and disposedon the diffusion region. An input layer is disposed on a top end of thefirst set of contact plugs. An output layer is disposed on a top end ofthe second set of contact plugs.

In an embodiment, for the varactor structure, the base portion of thefirst closed gate structure and the base portion of the second closedgate structure are disposed on two sides of the diffusion region.

In an embodiment, for the varactor structure, the diffusion regionincludes a first region inside the plurality of close loops and a secondregion outside the plurality of close loops.

In an embodiment, for the varactor structure, the second set of contactplugs includes a first group distributed in the first region of thediffusion region and constituting a two-dimensional array.

In an embodiment, for the varactor structure, the second set of contactplugs includes a second group two-dimensionally distributed in thesecond region of the diffusion region.

In an embodiment, for the varactor structure, the second set of contactplugs includes a second group distributed in the second region of thediffusion region and including at least a plurality of two-dimensionalarrays, distributed between the plurality of close loops.

In an embodiment, for the varactor structure, the first set of contactplugs on each of the base portions includes at least a first groupdistributed along a first extension line of each of the base portionsand a second group distributed along a second extension line of each ofthe base portions, and the first extension line is parallel to thesecond extension line.

In an embodiment, for the varactor structure, the first closed gatestructure and the second closed gate structure each further include astriped portion, connected between the close loop and the base portion.

In an embodiment, the invention also provides a method for fabricating avaractor structure. The method includes: providing a substrate; forminga first gate structure and a second gate structure on the substrate,where the first gate structure and the second gate structure eachinclude a base portion and a plurality of line portions connected to thebase portion, and the plurality of line portions of each of the firstgate structure and the second gate structure is alternately arranged,where the plurality of line portions of the first gate structure and thesecond gate structure is alternately arranged;

forming a meander diffusion region in the substrate, surrounding theplurality of line portions; forming a first set of contact plugs, withat least two columns or rows, and disposed on the plurality of baseportions of the first gate structure and the second gate structure;forming a second set of contact plugs, planned with at least two columnsor rows, and disposed on the meander diffusion region; forming an inputlayer on a top end of the first set of contact plugs; and forming anoutput layer on a top end of the second set of contact plugs.

In an embodiment, for the method for fabricating a varactor structure,each of the plurality of line portions is of a single-line structure.

In an embodiment, for the method for fabricating a varactor structure,each of the plurality of line portions includes a brunched structure atan end relative to the base portion.

In an embodiment, for the method for fabricating a varactor structure,the base portion of the first gate structure and the base portion of thesecond gate structure are disposed on two sides of the meander diffusionregion.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the invention, and are incorporated in and constitute apart of this specification. The drawings illustrate embodiments of theinvention and, together with the description, serve to explain theprinciples of the invention.

FIG. 1 is a schematic basic structural diagram of a varactor accordingto an embodiment of the invention.

FIG. 2 is a schematic cross-sectional structural diagram of a varactoraccording to an embodiment of the invention.

FIG. 3 is a schematic top-view structural diagram of a varactoraccording to an embodiment of the invention.

FIG. 4A to FIG. 4C are each a schematic plane diagram of some componentsof a varactor according to an embodiment of the invention.

FIG. 5 is a schematic top-view structural diagram of a varactoraccording to an embodiment of the invention.

FIG. 6A and FIG. 6B are each a schematic plane diagram of somecomponents of a varactor according to an embodiment of the invention.

DESCRIPTION OF THE EMBODIMENTS

Reference will now be made in detail to the present exemplaryembodiments of the invention, examples of which are illustrated in theaccompanying drawings. Wherever possible, the same reference numbers areused in the drawings and the description to refer to the same or likeparts.

The invention relates to a varactor structure and a method forfabricating same. According to the varactor structure, quality of avaractor may be improved at least through planning a contact plug,thereby still maintaining required quality and improving performance ofa circuit at a relatively high operating frequency.

The following describes the invention by using some embodiments.However, the invention is not limited to the listed plurality ofembodiments, and the plurality of embodiments may be combinedappropriately.

FIG. 1 is a schematic basic structural diagram of a varactor accordingto an embodiment of the invention. Referring to FIG. 1, a varactorstructure is, for example, formed by a MOS structure. A gate structureis formed on a substrate 50, and includes a gate insulation layer 54 anda gate layer 56 on the gate insulation layer 54. In an embodiment, thesubstrate 50 shown herein may alternatively represent a doped wellregion on a silicon substrate. The substrate 50 is, for example, a dopedregion of an N conductive type. Similar to the MOS structure, adiffusion region 52 is formed on each of the substrates 50 at two sidesof the gate layer 56. In an embodiment, the diffusion region 52 is aregion doped with a high concentration of N conductive type, N+.Therefore, the diffusion region 52 and the substrate 50 are of a sameconductive type, for example, the N conductive type. The gate insulationlayer 54 is, for example, an oxide layer, used as a dielectric materialfor a capacitor. The gate layer 56 is, for example, a poly-siliconmaterial.

FIG. 1 shows a basic varactor structure, and the gate layer 56 is anelectrode of the capacitor, and is, for example, an input electrode. Thediffusion region 52 surrounds the gate layer 56, and is used as anoutput electrode. The diffusion region 52 surrounds the gate layer 56and is subsequently connected to an electrode tip of an external circuitby using a contact plug. However, an overall structure of a connectionto the external circuit by using the contact plug may generate aparasitic capacitance and a parasitic resistance, causing an unnecessarycoupling effect. Such a coupling effect may lead to degradation inquality of the varactor during high-frequency operation.

The invention looks into degradation of quality of a common varactorduring high-frequency operation and then provides an overall structureof a varactor.

FIG. 2 is a schematic cross-sectional structural diagram of a varactoraccording to an embodiment of the invention. FIG. 3 is a schematictop-view structural diagram of a varactor according to an embodiment ofthe invention. FIG. 2 is a schematic cross-sectional view of a gatestructure 112 in FIG. 3.

Referring to FIG. 2 and FIG. 3, a doped well region 102 is formed on asubstrate 100, for example, a well region of an N conductive type. In anembodiment, the doped well region 102 may be used as an active region.On the periphery of the doped well region 102, a doped well region 104of a P conductive type may alternatively be formed according to anactual need, and the conductive type of the doped well region 104 isopposite to that of the doped well region 102. An isolation structure110 is also formed on the substrate 100 to provide appropriateisolation. The gate structure 112 is formed on the doped well region 102of the substrate 100 and includes a gate insulation layer and a gatelayer on the gate insulation layer. In an embodiment, the gate structure112 may further include a gap wall on a side wall. The gate structure112 is, for example, used as an input terminal IN, and as to bedescribed below, is to be connected to a conductive layer 124 at thetop. A diffusion region 108 with a relatively high concentration N+isformed in the doped well region 102. The diffusion region 108 is, forexample, used as an output end of the varactor. Therefore, an input endand an output terminal are determined according to an operationmechanism of a circuit, are not limited to the listed embodiment, may beinterchanged as needed, and do not need to be limited. In addition, aguard ring 116G may further be formed in the doped well region 104according to an actual need, and the guard ring 116G is, for example, adoped ring of a P conductive type.

In addition, it should be further noted that, according to asemiconductor fabricating technology, during formation of a desiredelement structure, formation of an internal dielectric layer isincluded, to assist in formation and support of the structure to beformed. The internal dielectric layer covers the formed structure. Inthe following description, the description of the internal dielectriclayer is omitted, and the figure illustrates only the structure of theelement and does not show the internal dielectric layer.

From a profile structure of FIG. 2, the diffusion region 108 is on bothsides of the gate structure 112. However, from a top view of FIG. 3, inan embodiment, the diffusion region 108 is a meander diffusion region,formed in the substrate 100, and surrounds a plurality of line portions112 b of the gate structure 112. In terms of a geometric shape, themeander diffusion region may be a snake-shaped diffusion region.

The line portion 112 b of the gate structure 112 is connected to a baseportion 112 a of the gate structure 112. In an embodiment, the entiregate structure includes two gate structures 112, disposed on thesubstrate 100. The two gate structures 112 may be referred to as a firstgate structure and a second gate structure, arranged facing each other.The two gate structures 112 each include a base portion 112 b and aplurality of line portions 112 a connected to the base portion 112 b,where the plurality of line portions 112 a of the two gate structures112, or the first gate structure and the second gate structure, isalternately arranged. A meander diffusion region 108 is formed in thesubstrate 100, and surrounds the plurality of line portions 112 a. Aquantity of the line portions 112 a is determined according to an actualcondition. In the embodiment of FIG. 3, that one gate structure 112includes two line portions 112 a is used as an example for description.In addition, there may be alternatively a gap wall on a side wall of thegate structure 112, for example, a side wall of the line portion 112 a.

In an embodiment, each of the plurality of line portions 112 a is of asingle-line structure. In an embodiment, each of the plurality of lineportions 112 a includes a brunched structure at an end relative to thebase portion 112 b.

After being formed, the gate structure 112 and the diffusion region 108need to be connected to an external circuit. Considering improvement ofoverall operating quality of the varactor, the invention provides asolution of pulling actual connection ends of the gate structure 112 andthe diffusion region 108 to the top end of the entire element structure,thereby reducing a resistive coupling effect and/or a capacitivecoupling effect of a connection line. It may be seen from thecross-sectional view of FIG. 2 that, for example, the conductive layer122 used as an output may enable the diffusion region 108 to beconnected to the conductive layer 122 that is used as an output layer(OUT) at the top end by using a set of contact plugs 118. Because adistance from the diffusion region 108 to the conductive layer 122 isrelatively large, the middle part of the diffusion region 108 may beachieved by using a plurality of segments of plugs and conductive layersin coordination with fabrication of other elements. For example, thecontact plug 118 is connected to the conductive layer 122 at an upperend by using a plurality of segments of the conductive layer 114 and theconductive layer 120.

In an embodiment, the gate structure 112 is used as an input end IN, aheight of an input conductive layer 124 is not shown in thecross-sectional view of FIG. 2. Viewed from the top view of FIG. 3, theconductive layer 122 and the conductive layer 124 are the same inconductivity height in fabricating and are, for example, metal layers,formed in a same fabricating process.

The following continues to describe plans of the contact plug 118 and acontact plug 118′ provided in the invention. The contact plug 118 andthe contact plug 118′ are configured to respectively connect thediffusion region 108 and the gate structure 112 to a line structure ofan input end IN and an output end OUT, which is also an internalconnection line structure. The contact plug 118 and the contact plug118′ provided in the invention are both planned to include at least twocolumns or two rows of distribution.

Referring to FIG. 3, a set of contact plugs 118 connected to the meanderdiffusion region 108 includes a plurality of contact plugs 118. Thesecontact plugs 118 are arranged with the meander diffusion region 108. Aset of contact plugs 118 on the meander diffusion region 118 includes atleast a first group 118 a distributed along a first meander line of themeander diffusion region 108 and a second group 118 b distributed alonga second meander line of the meander diffusion region 108. The firstmeander line is parallel to the second meander line, which includesdistributions of two columns or two rows in terms of distributions ofcolumns or rows. In an embodiment, in addition to the distribution alongthe first meander line and the second meander line, there may be otherdistributions, for example, a distribution along a third meander line orindividual distributions in some regions. The invention is not limitedto other additional distributions.

A set of contact plugs 118′ connected to the gate structure 112 includesat least a first group distributed along a first extension line of thebase portion 112 b and a second group distributed along a secondextension line of the base portion 112 b. The first extension line isparallel to the second extension line, which includes distributions oftwo columns or two rows in terms of distributions of columns or rows. Inaddition to the distribution along the first extension line and thesecond extension line, there may be other distributions, for example, adistribution along a third extension line or individual distributions insome regions. The invention is not limited to other additionaldistributions.

The contact plugs 118 and 118′ need to be extended from the substrate100 to the conductive layers 122 and 124 at the top end, and theirdistances may be very long. Therefore, the conductive layer 114 and theconductive layer 120 may be formed in a relay manner in coordinationwith element fabricating in other regions, to connect a plurality ofsegments of contact plugs 118 and 118′. The invention is not limited toa particular disposition of the conductive layer 114 and the conductivelayer 120. The conductive layer 114 and the conductive layer 120 are,for example, metal layers, and are completed in a same fabricatingprocess during formation of an internal connection line structure.

In addition, the guard ring 116G is connected to the conductive layer116 by using the contact plug 116C, to receive a low voltage VSS. Aheight of the conductive layer 116 may not need to be equal to those ofthe conductive layers 122 and 124.

FIG. 4A to FIG. 4C are each a schematic plane diagram of some componentsof a varactor according to an embodiment of the invention. Referring toFIG. 4A, FIG. 2, and FIG. 3, as described above, the gate structure 112on the substrate includes the plurality of line portions 112 a and thebase portion 112 b. The two gate structures 112 are at two sides of themeander diffusion region 108. The plurality of line portions 112 a isalternately arranged. The diffusion region 108 surrounds the pluralityof line portions 112 a to constitute a meander structure. The diffusionregion 108 is formed, for example, after the gate structure 112 by usingthe gate structure 112 as a mask and doping the substrate 100 with arelatively high concentration N+.

Referring to FIG. 4B, FIG. 2, and FIG. 3, in an embodiment, theconductive layer 114 may have a same meander structure as the diffusionregion 108, but the invention is not limited to the embodiment, andother geometric structures may be used. The conductive layer 114 is arelay connection of the contact plug 118.

Referring to FIG. 4C, FIG. 2, and FIG. 3, the conductive layer 122 andthe conductive layer 124 are at the top end and are at the same height.In an embodiment, for used of the varactor, the conductive layer 122 is,for example, used as an output layer, and the conductive layer 124 is,for example, used as an input layer. In addition, the conductive layer120 used for connecting to the contact plug 118 in the relay manner isalso under the conductive layer 122. Similarly, the conductive layerused for connecting to the contact plug 118′ in the relay manner is alsodisposed under the conductive layer 124. The invention is not limited tothe manner of the listed embodiment.

Based on an effect of reducing resistive and capacitive couplings, thestructure of FIG. 3 may be further modified. FIG. 5 is a schematictop-view structural diagram of a varactor according to an embodiment ofthe invention.

Referring to FIG. 5, in an embodiment, a gate structure 112′ includes abase portion 112 b and a plurality of closed gate structures connectedto the base portion 112 b. An upper right part of FIG. 5 shows adistribution manner for the gate structure 112′ and its surroundingcontact plugs. In an embodiment, the closed gate structures include, forexample, close loops 112 c, respectively connected to the base portion112 b.

A plurality of close loops 112 c belonging to two gate structures 112′is also alternately arranged. In addition, the closed gate structure mayfurther include, for example, a striped portion 112 d, connected betweenthe base portion 112 b and the close loop 112 c, but the invention isnot limited to the disposition of the striped portion 112 d.

Because the closed gate structure includes the close loop 112 c, adiffusion region 108 is no longer of a meander shape compared with FIG.3, but still surrounds the gate structure 112′, where one part of thediffusion region 108 is inside the close loop 112 c and one part of thediffusion region 108 is outside the close loop 112 c.

In the present embodiment, there are also two gate structures 112′ ontwo sides of the diffusion region 108, a plurality of close loops 112 crespectively belonging to the two gate structures 112′ is alsoalternately arranged, and details thereof are omitted herein. Ageometric shape of the close loop 112 c is not limited to the listedembodiment. In an embodiment, the close loop 112 c is, for example, of apolygonal shape, or a smooth close loop. In an embodiment, the closeloop 112 c can be formed as long as its size meets an element designrule, for example, a width D1 and a length D2 of the close loop 112 ccan meet the element design rule.

In coordination with the diffusion region 108 and the gate structure112′, two sets of contact plugs are still maintained for distribution.One set of contact plugs 118′ is planned with at least two columns orrows, and disposed on the base portion 112 b of each gate structure112′. The other set of contact plugs 118 is also planned with at leasttwo columns or rows, and is disposed on the diffusion region 108. Onepart of the diffusion region 108 is inside the close loop 112 c and onepart of the diffusion region 108 is outside the close loop 112 c.

Referring to the structure in FIG. 2, the contact plug 118 or 118′ mayhave a plurality of segments and be connected to the conductive layer122 or 124 that is, for example, used as an input layer IN or an outputlayer OUT by using the conductive layer 114 and the conductive layer 120that are connected in a relay manner.

In an embodiment, the base portion 112 b of the gate structure 112 or112′ may be an integrally connected layer or a plurality of separateregions corresponding to the close loop 112 c. The invention is notlimited to the disposition manner of the base portion 112 b of the gatestructure 112 or 112′. However, the contact plugs 118′ on the baseportion 112 b are in at least two columns or two rows. In an embodiment,the contact plugs 118′ on the base portion 112 b are two-dimensionallydistributed. Similarly, the contact plugs 118 on the diffusion region108 are also two-dimensionally distributed. In addition, if the baseportions 112 b of the gate structures 112′ are separately, someauxiliary contact plug 118″ may be disposed between the conductive layer114 and the conductive layer 120. The planning of the contact plug inthe invention is not limited to the listed embodiment.

FIG. 6A and FIG. 6B are each a schematic plane diagram of somecomponents of a varactor according to an embodiment of the invention.Referring to FIG. 6A, FIG. 2, and FIG. 5, the gate structure 112′includes the structure of the close loop 112 c, and the diffusion region108 is not distributed in a meander structure. Therefore, a geometricshape of the conductive layer 114 in a relay connection may be, forexample, adjusted correspondingly. The conductive layer 114 and thediffusion region 108 are connected to each other by using a segment ofthe contact plug 118.

Referring to FIG. 6B, the conductive layer 122 and the conductive layer124 are at an upper layer of the varactor, and are used, for example, asan input end and an output end, to be connected to an external circuit.The structure of the varactor in the present embodiment may reduce aresistive coupling effect.

The invention also provides a method for fabricating a varactorstructure. The method includes: providing a substrate 100; forming afirst gate structure 112 and a second gate structure 112 on thesubstrate 100, where the first gate structure 112 and the second gatestructure 112 each include a base portion 112 b and a plurality of lineportions 112 a connected to the base portion 112 b, and the plurality ofline portions 112 a of each of the first gate structure and the secondgate structure is alternately arranged, and the plurality of lineportions of each of the first gate structure 112 and the second gatestructure 112 is alternately arranged; forming a meander diffusionregion 108 in the substrate 100, surrounding the plurality of lineportions 112 a; forming a first set of contact plugs 118′, with at leasttwo columns or rows, and disposed on the plurality of base portions 112b of the first gate structure 112 and the second gate structure 112;forming a second set of contact plugs 118, planned with at least twocolumns or rows, and disposed on the meander diffusion region 108;forming a first conductive layer 124 on a top end of the first set ofcontact plugs; and forming a second conductive layer 122 on a top end ofthe second set of contact plugs.

The overall structure of the varactor provided in the invention includesadjustment of the gate structure and planning of the contact plug, andthe gate and the diffusion region of the varactor may be lifted to thetop end of the element as an input end and an output end to be connectedto an external circuit. Quality of the varactor may be improved, therebyreducing generally rapid degradation in a quality factor with anincrease in operating frequency.

Finally, it should be noted that the foregoing embodiments are merelyintended for describing the technical solutions of the invention, butnot for limiting the invention. Although the invention is described indetail with reference to the foregoing embodiments, persons of ordinaryskill in the art should understand that they may still makemodifications to the technical solutions described in the foregoingembodiments or make equivalent replacements to some or all technicalfeatures thereof, without departing from the scope of the technicalsolutions of the embodiments of the invention.

It will be apparent to those skilled in the art that variousmodifications and variations can be made to the structure of the presentinvention without departing from the scope or spirit of the invention.In view of the foregoing, it is intended that the present inventioncover modifications and variations of this invention provided they fallwithin the scope of the following claims and their equivalents.

What is claimed is:
 1. A varactor structure, comprising: a substrate; afirst gate structure and a second gate structure, disposed on thesubstrate, wherein the first gate structure and the second gatestructure each comprise a base portion and a plurality of line portionsconnected to the base portion, and the plurality of line portions ofeach of the first gate structure and the second gate structure isalternately arranged; a meander diffusion region, formed in thesubstrate, and surrounding the plurality of line portions; a first setof contact plugs, planned with at least two columns or rows, anddisposed on the plurality of base portions of the first gate structureand the second gate structure; a second set of contact plugs, plannedwith at least two columns or rows, and disposed on the meander diffusionregion; a first conductive layer, disposed on a top end of the first setof contact plugs; and a second conductive layer, disposed on a top endof the second set of contact plugs.
 2. The varactor structure accordingto claim 1, wherein each of the plurality of line portions is of asingle-line structure.
 3. The varactor structure according to claim 1,wherein each of the plurality of line portions comprises a brunchedstructure at an end relative to the base portion.
 4. The varactorstructure according to claim 1, wherein the base portion of the firstgate structure and the base portion of the second gate structure aredisposed on two sides of the meander diffusion region.
 5. The varactorstructure according to claim 1, wherein the second set of contact plugson the meander diffusion region comprises at least a first groupdistributed along a first meander line of the meander diffusion regionand a second group distributed along a second meander line of themeander diffusion region, and the first meander line is parallel to thesecond meander line.
 6. The varactor structure according to claim 1,wherein the first set of contact plugs on each of the base portionscomprises at least a first group distributed along a first extensionline of each of the base portions and a second group distributed along asecond extension line of each of the base portions, and the firstextension line is parallel to the second extension line.
 7. The varactorstructure according to claim 1, further comprising a guard ring on thesubstrate and surrounding the first gate structure, the second gatestructure, and the meander diffusion region.
 8. The varactor structureaccording to claim 1, further comprising a doped well region on thesubstrate and below the meander diffusion region, the first gatestructure, and the second gate structure.
 9. A method for fabricating avaractor structure, comprising: providing a substrate; forming a firstgate structure and a second gate structure on the substrate, wherein thefirst gate structure and the second gate structure each comprise a baseportion and a plurality of line portions connected to the base portion,and the plurality of line portions of each of the first gate structureand the second gate structure is alternately arranged, wherein theplurality of line portions of the first gate structure and the secondgate structure is alternately arranged; forming a meander diffusionregion in the substrate, surrounding the plurality of line portions;forming a first set of contact plugs, with at least two columns or rows,and disposed on the plurality of base portions of the first gatestructure and the second gate structure; forming a second set of contactplugs, planned with at least two columns or rows, and disposed on themeander diffusion region; forming a first conductive layer, disposed ona top end of the first set of contact plugs; and forming a secondconductive layer, disposed on a top end of the second set of contactplugs.
 10. The method for fabricating a varactor structure according toclaim 9, wherein each of the plurality of line portions is of asingle-line structure.
 11. The method for fabricating a varactorstructure according to claim 9, wherein each of the plurality of lineportions comprises a brunched structure at an end relative to the baseportion.
 12. The method for fabricating a varactor structure accordingto claim 9, wherein the base portion of the first gate structure and thebase portion of the second gate structure are disposed on two sides ofthe meander diffusion region.